发明名称 VOLTAGE-DEPENDENT NONLINEAR RESISTANCE ELEMENT AND MANUFACTURE THEREOF
摘要 PURPOSE:To remove noise of a low voltage and the like by a method wherein Sr is contained excessively so as to set a ratio of Sr to Ti at 1.001-1.05 and, in addition, one or more of CeO2, Y2O3 and La2O3 are added to SrTiO3 containing Li and F. CONSTITUTION:An SrTiO3 powder is used as a raw material, Sr is added excessively so as to make 1.001<=Sr/Ti<=1.05, then, a lattice defect is increased, a semiconductor property is promoted in addition, when another element, e.g., Ce, Y or La, is subetituted for Sr, an atomic property is controlled and the semiconductor property is promoted. Then, when LiF is added and this assembly is fired in a reducing atmosphere or in an atmosphere of nitrogen, a sintering operation is promoted by a liquid sintering operation. By this setup, it is possible to obtain an element whose varistor voltage is comparatively low, whose alphaand dielectric constant are large, whose tan delta is small, which can simultaneously satisfy a characteristic of excellent reliability and which can protect a semiconductor or a circuit from a noise and static electricity.
申请公布号 JPH01289203(A) 申请公布日期 1989.11.21
申请号 JP19880119511 申请日期 1988.05.17
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 UENO IWAO;WAKAHATA YASUO;OKINAKA HIDEYUKI;WADA REIKO
分类号 C04B35/46;H01C7/10 主分类号 C04B35/46
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