| 摘要 |
PURPOSE:To make a semiconductor integrated circuit device to augment the effective area of a capacitor by a method wherein the surface of an electrode is etched using an etching liquid, whose etching rate is different in crystal grains and crystal grain boundaries, which are made of a polycrystalline material to form a fine rough part. CONSTITUTION:An impurity is diffused in a prescribed region of the surface of an Si substrate 301 to form a diffused region 302 and after an SiO2 layer 104 is deposited thereon, the SiO2 layer 304 on the region 302 is removed and a poly Si layer 305 is deposited on the whole surface of the substrate to constitute a first counter electrode of a capacitor cell. Moreover, the surface of the layer 305 is etched using an etching liquid, whose etching rate is different in polysilicon crystal grains and polysilicon crystal grain boundaries, to form a rough part 306 on the whole surface of the layer 305. Then, an SiO2 layer 307 is formed by a CVD method and a poly Si layer 108 is deposited on the whole surface of the layer 307 to form a second counter electrode of the capacitor cell. Moreover, an aperture 309 is formed on the region 302 to deposit a poly Si layer 310 and the surfaces of the layers 308 and 310 are etched using an etching liquid. Whose etching rate is different in polysilicon crystal grains and polysilicon crystal grain boundaries, to form a rough part 311 on the surfaces of the layers 108 and 310. |
