| 摘要 |
PURPOSE:To reduce the lateral impurity diffusion length of a power supply line, to lessen a ratio to reduce undesirably the resistance value of a load resistor adjacent to the power supply line and to contrive the improvement of the integration degree of a semiconductor storage device by a method wherein the impurity concentrations of the load resistor, a fuse and the power supply line are formed higher in the order of the load resistor, the power supply line and the fuse. CONSTITUTION:A load resistor R, a fuse F for generating a control signal and a power supply line Vcc are constituted of a single semiconductor layer and their impurity concentrations are formed higher in the order of the resistor R, the supply line Vcc and the fuse F. As a result, the value of the concentration of an impurity, which is introduced in the power supply line, becomes a necessary and sufficient value and the lateral impurity-diffusion length is reduced. |
