| 摘要 |
PURPOSE:To improve the recording and erasing characteristics, etc., of the phase transition type information recording medium by incorporating a specific compsn. into a recording layer. CONSTITUTION:The compsn. expressed by the formula (SixTe100-x)100-yMy (x, y are, by atomic%, 2<=x<=50, 0<=y<=20, respectively; M is at least one kind of the element selected from the group consisting of Ge, Sn, P, As, Sb, Bi, Se, Po, B, C, etc., and Ni) is incorporated into the recording layer which causes a phase transition between two different phases in the irradiated part when subjected to irradiation of a light beam. Namely, the Si-Te alloy is the material which satisfies the conditions as the recording layer of the phase transition type recording medium if the content of the Si is between 2-50atomic%. This element is added at 20atomic% into this alloy. The recording and erasing characteristics, etc., are thereby improved. |
