| 摘要 |
PURPOSE:To attain high speed switching drive to a heavy load capacity without being attended with any remarkable increase in the pattern area by connecting two bipolar transistors(TRs) of the same conduction type in series between two power terminals and connecting a base current control circuit comprising plural MOS TRs to each base. CONSTITUTION:P-channel TRs 3, 4 control the base current of the 1st NPN TR 1 and N-channel TRs 5, 6 control the base current of the 2nd NPN TR 2. Moreover, an M-channel TR 9 whose gate is connected to an input terminal 7 and an N-channel TR 10 whose gate receives a signal, the inverse of phi are connected in parallel between the base of the 1st NPN TR 1 and round, and an N-channel TR 11 whose gate is connected to an output terminal 8 and an N-channel TR 12 whose gate receives the said signal inverse of phi are connected in parallel between the base of the 2nd NPN TR 2 and round. Thus, the switching drive is applied at a high speed even to a heavy load capacity. |
