发明名称 MANUFACTURE OF SEMICONDUCTOR PHOTODETECTOR
摘要 PURPOSE:To improve adhesive properties with a supporting board by forming a photodetecting region and an output terminal region in the state of a laminated layer structure of a transparent electrode film, a thin semiconductor film and a metal electrode film, and then irradiating the terminal region with an energy beam to electrically couple the transparent electrode film of this region to the metal electrode film. CONSTITUTION:A transparent electrode film 2 is formed on one main surface of a light transmissive supporting board 1 in the state of a body 2a and an island 2b. A thin semiconductor film 3 including a semiconductor optical active layer is formed on substantially whole one main surface of the board 1 including the film 2, and a metal electrode film 4 is formed on the upper surface thereof. The body 4a of a metal electrode film 4, the island 2b of the film 2 and the island 4b of the film 4, the body 2a of the film 2 are respectively electrically connected by radiating the film 4 with an energy beam LB on a first output terminal region 6 and a second output terminal region 7. Thus, the adhesive properties with the board can be improved.
申请公布号 JPH01287971(A) 申请公布日期 1989.11.20
申请号 JP19880117661 申请日期 1988.05.13
申请人 SANYO ELECTRIC CO LTD 发明人 MURATA KENJI;INOUE HIROSHI;TANAKA TOSHIYA;TANAKA HIROYUKI;KISHI YASUO
分类号 H01L27/146;H01L27/14;H01L31/04 主分类号 H01L27/146
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