发明名称 Method of selecting a reserve column in a digital memory and circuit for its implementation
摘要 The invention relates to a reserve column selection circuit comprising two groups of line interrupters 10, 10' arranged between two reserve input/output line units 4, 4' connected to two reserve bit lines 3, 3' and two normal input/output line units 5, 5' connected to two normal bit lines 6, 6'; the two line interrupter groups are controlled by an output signal phi D from a reserve column decoder 1; two normal line excitation elements 20, 20' are connected to the respective normal input/output line units 5, 5' and are controlled by the output signal phi D from the reserve column decoder; an inverter I1 produces a clock signal phi SCD of inverted phase which controls the link between the two reserve input/output line units and the two reserve bit lines. Application to row/column digital memories. <IMAGE>
申请公布号 FR2631483(A1) 申请公布日期 1989.11.17
申请号 FR19890001469 申请日期 1989.02.06
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 MYUNG-HO BAE
分类号 G11C8/00;G11C11/401;G11C29/00;G11C29/04 主分类号 G11C8/00
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