| 摘要 |
PURPOSE:To enable desired characteristics to be obtained easily by selectively removing a short-circuit part between both electrodes so as to recover characteristics. CONSTITUTION:For a photoelectromotive force device, a first electrode consisting of SnO2, amorphous silicon semiconductor layer (optical semiconductor layer) consisting of amorphous silicon, and a second electrode consisting of metal such as, e.g., Al, Cr, Ag, etc., are formed on a substrate in this order. In this case, if a pin hole is formed in the optical semiconductor layer, at the time of second electrode formation, second electrode material passes through the pin hole and the second electrode and the first electrode becomes a short- circuit condition. In this case, to recover the characteristics, the second electrode material accumulated in the pin hole part is removed selectively. Hereby, the lowering of characteristics of the photoelectromotive force device by the short- circuit part can be prevented. |
