METHOD FOR EPITAXIAL GROWTH OF GALLIUM ARSENIDE,申请号JP19880116478-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	METHOD FOR EPITAXIAL GROWTH OF GALLIUM ARSENIDE
摘要
申请公布号	JPH01286999(A)	申请公布日期	1989.11.17
申请号	JP19880116478	申请日期	1988.05.13
申请人	RIKAGAKU KENKYUSHO;NIPPON STEEL CORP	发明人	NANBA SUSUMU;MORIYA AKIHIRO;AOYANAGI KATSUNOBU;IIMURA YASUFUMI;NAGATA AKIRA
分类号	C30B23/08;C30B29/42;H01L21/203	主分类号	C30B23/08
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Metallic identification chip and process for producing thereof

USE OF ANTI-FERRITIN MONOCLONAL ANTIBODIES IN THE TREATMENT OF SOME CANCERS

Tire condition monitoring apparatus and method

Method for producing complex metal oxide powder

Grinding machine

USE OF A3 ADENOSINE RECEPTOR ANTAGONISTS IN THE MANUFACTURE OF A MEDICAMENT FOR REDUCING INTRAOCULAR PRESSURE

Process for backing book blocks

BRAKE SYSTEM FOR A VEHICLE

Inhaler for powdered medicaments

DISPOSABLE INJECTION DEVICE

Lipidic composition and its use for the preparation of cosmetic/pharmaceutic compositions, textiles, paper, fibers or leather

Cam apparatus and pick and place apparatus utilizing the same

AQUEOUS CLEANSING COMPOSITION

Strand displacement amplification of RNA targets

Method and apparatus for comparison of structured documents

SUSPENSION SYSTEM FOR A VEHICLE