发明名称 REWRITABLE NON-VOLATILE MEMORY REWRITING DEVICE
摘要 <p>PURPOSE:To reduce the number of exchange of a non-volatile memory by dividing a rewritable non-volatile memory into plural blocks, dividing a volatile memory into corresponding blocks with the same size similarly, and writing information on the non-volatile memory when change in the information in the block of the volatile memory occurs. CONSTITUTION:In a rewritable non-volatile memory rewriting device, the certain information of a first block in a first block area in the volatile memory is written on a corresponding second block in a second block area in the rewritable non-volatile memory 2 by referring to the address table of the rewritable non-volatile memory. Next, written information is compared with first block information in the volatile memory 3, and it is decided that abnormality is generated in the second block when noncoincidence is obtained, and the first block information is written on a nonuse second block. To attain such purpose, the title device is constituted of a microprocessor 1, an EEPROM2, a RAM3, and a control program storage ROM4.</p>
申请公布号 JPH01286199(A) 申请公布日期 1989.11.17
申请号 JP19880115657 申请日期 1988.05.12
申请人 HITACHI LTD;HITACHI TECHNO ENG CO LTD 发明人 IZAWA KENJI;FUJITA MASAHIRO;SAKUMA HIROYA
分类号 G11C17/00;G11C16/02;G11C29/00;G11C29/04 主分类号 G11C17/00
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