| 摘要 |
PURPOSE:To prevent short-circuit between a chip and a wire by edge touch by forming an insulation film at the side face and the periphery of a groove. CONSTITUTION:A groove 12 is formed in a silicon substrate 11 by a dicing saw or laser beam irradiation. Subsequently, a silicon oxide film 15 is formed at a groove 12 part in vacuum by focused ion beams 13. Thereafter, it is divided at the groove part into chips and these are mounted in cases and a wire 17 is bonded to a metallic wiring 16 on the chip so as to make a semiconductor device. Hereby, even if the wire 17 bonded onto the metallic wiring 16 loosens and contacts with the chip end after it is cut into the chips, it is insulated by a silicon oxide film 14 and short-circuit does not occur. |
