METHOD FOR FABRICATING INSULATED-GATE FIELD EFFECT TRANSISTORS HAVING CONTROLLED OPERATING CHARACTERISTICS,申请号CAD789750-传众专利搜索

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发明名称	METHOD FOR FABRICATING INSULATED-GATE FIELD EFFECT TRANSISTORS HAVING CONTROLLED OPERATING CHARACTERISTICS
摘要
申请公布号	CA789750(A)	申请公布日期	1968.07.09
申请号	CAD789750	申请日期
申请人	INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人	FREDERICK HOCHBERG;GEORGE CHEROFF
分类号		主分类号
代理机构		代理人
主权项
地址

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