| 摘要 |
<p>PURPOSE:To shorten leaking time and to normally latch the state of an output in a next-stage flip flop(F.F) by switching a potential supplied to a memory cell. CONSTITUTION:Transistors 12 and 13 to switch the potential to the side of N-channel transistors 91-105 of a memory part 5 are provided and the potential on the side of the N-channel transistors 91-105 of the memory part 5 is con nected to the side of a VDD until immediately before data are latched in a F.F 7. Consequently, a charge accumulated in a parasitic capacity can be com pletely held from getting out by the off-leaks of the transistors 91-105. Thus, by switching the potential on the side of the N-channel transistors 91-105 of the memory part 5 to the side of a VSS immediately before the data are latched in the F.F, the contents of the memory can be normally latched in the next stage F.F.</p> |
