| 摘要 |
<p>PURPOSE:To shorten a manufacture process by forming picture element electrodes and gate electrodes by a single-time photomask process, altering the constitution of storage capacity and forming one electrode of the same member with a signal line, and utilizing a gate insulating film as an insulating film. CONSTITUTION:Metal layers which constitute a transparent conductive layer 26 and a gate 16 are adhered successively and the transparent conductive layer 26 covered with gate metal is formed selectively; and the exposed part of the transparent conductive layer 26 is constituted as a picture element electrode 34 and gate wiring and the picture element electrode 34 are formed at the same time. The storage capacity is obtained not by using two transparent electrode and a dedicated insulating layer, but by diverting the picture element electrode 34 and a gate insulating film, and the other electrode 35 is formed simultaneously with the formation of the signal line. Consequently, the manufacture process is shortened.</p> |
