| 摘要 |
PURPOSE:To provide excellent moisture resistance by covering all outer peripheries with an inorganic insulating film except copper metal fine wirings of specific purity and external leads, and covering the outer peripheries with a resin layer. CONSTITUTION:A semiconductor chip 1 is applied to the island 6 of a lead frame 2 by a brazing material 4, and the electrode pads of the chip 1 are connected to the internal leads of the frame 2 with metal fine wirings 7 of 99.99% or more of copper. Then, an inorganic insulating film 9 having preferable adhesive properties to resin is formed on the outer periphery including the chip 1 placed on the island 6 of the frame 2 and the outer peripheries of the wirings 7 and the leads 3, resin-sealed, covered with resin 8, and external leads 5 are bent. Here, the reason why the wirings 7 are limited to a copper material having 99.99% or more of purity is that bondability, adhesive properties to the inorganic insulating film and corrosion resistance. Thus, a resin-sealed semiconductor device having a structure of high moisture resistance can be obtained. |
