| 摘要 |
PURPOSE:To provide the structure having the sufficient sensitivity up to a long wavelength region and has the improved heat resistance by providing a photosensitive layer consisting of arsenic triselenide added with TiO phthalocyanine on a substrate. CONSTITUTION:The photosensitive layer 2 formed by adding the TiO phthalocyanine uniformly into the arsenic triselenide As2Se3 by vacuum vapor deposition, etc., is formed on the conductive substrate 1 consisting of aluminum, etc. The TiO phthalocyanine layer 2 consisting of the arsenic triselenide added with the TiO phthalocyanine is preferably formed to 1-80mum thickness and contains 0.5-10wt.% TiO phthalocyanine added thereto. The TiO phthalocyanine is added over the entire thickness of the TiO phthalocyanine layer 2 and the conc. of the TiO phthalocyanine may be changed at need within the photosensitive layer. The structure having the sensitivity up to the long wavelengths, the sufficient electrostatic charge potential and the improved heat resistance is thereby obtd. |
