PROCESS FOR THE PRODUCTION OF A MASK FOR RADIATION LITHOGRAPHY
摘要
<p>Process for the production of a mask for radiation lithography which has a mask carrier and a substrate on which an absorber layer is deposited which is to be structured in accordance with the required mask pattern. An absorber layer preferably having a thickness in the 0.2 to 1.2 mu m range and composed of partially oxidised tungsten having an oxygen content in the layer in the 21 to 29 atomic % range is preferably deposited on the substrate by cathode sputtering. …<IMAGE>… </p>
