发明名称 |
Silicon micro sensor and manufacturing method therefor. |
摘要 |
<p>A silicon micro sensor being comprised of a silicon substrate (2), a support element (6) formed over an etched portion of the silicon substrate and a sensor element (5) formed on the support element wherein the support element has a double layered structure being comprised of a silicon oxide film (3) formed on the silicon substrate using the thermal oxidization method and an aluminum oxide film (4) formed on the silicon oxide film using the sputtering method.</p> |
申请公布号 |
EP0341964(A2) |
申请公布日期 |
1989.11.15 |
申请号 |
EP19890304648 |
申请日期 |
1989.05.08 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
FURUBAYASHI, HISATOSHI;INAMI, YASUKIKO |
分类号 |
H01L21/306;G01L1/18;G01L9/00;H01L29/84 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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