发明名称 Silicon micro sensor and manufacturing method therefor.
摘要 <p>A silicon micro sensor being comprised of a silicon substrate (2), a support element (6) formed over an etched portion of the silicon substrate and a sensor element (5) formed on the support element wherein the support element has a double layered structure being comprised of a silicon oxide film (3) formed on the silicon substrate using the thermal oxidization method and an aluminum oxide film (4) formed on the silicon oxide film using the sputtering method.</p>
申请公布号 EP0341964(A2) 申请公布日期 1989.11.15
申请号 EP19890304648 申请日期 1989.05.08
申请人 SHARP KABUSHIKI KAISHA 发明人 FURUBAYASHI, HISATOSHI;INAMI, YASUKIKO
分类号 H01L21/306;G01L1/18;G01L9/00;H01L29/84 主分类号 H01L21/306
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