| 摘要 |
PURPOSE:To enable a transistor structure using the Josephson effect to be arranged by forming a first tunnelling film between a first electrode and a second electrode and forming a second tunnelling film between the second electrode and a third electrode. CONSTITUTION:On the front of a substrate 1, a first electrode 2, a second electrode 3 and a third electrode 4 are formed, and a first tunnelling film 5 and a second tunnelling film 6 are formed between the first electrode 2 and the second electrode 3 and between the second electrode 3 and the third electrode 4, respectively. Thus, a transistor structure whose emitter 7 is the first electrode 2, whose base 8 is the second electrode 3, and whose collector 9 is the third electrode 4. Accordingly, a transistor using the Josephson effect can easily be formed.
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