MAKING OF ISOLATION REGIONS FOR SEMICONDUCTOR DEVICE

摘要

The method can suppress lifting of nitride film, and reduce pattern size by using nitride film spacer when the field oxide film is formed. The method is composed of four process: (1) forming pad oxide film and polysilicon for buffing on Si substrate; (2) forming pattern for field oxide film after forming the first nitride film and low temperature oxide film on the polysilicon, in order; (3) forming the second nitride film on the pattern; and (4) forming nitride film spacer by etching-back on the second nitride film.