| 摘要 |
<p>PURPOSE:To simplify stages and to eliminate the danger of the generation of short circuit defects by pinholes of the intersected parts of gate bus lines and drain bus lines by providing an org. insulating film consisting of polyimide, etc., to the intersected parts. CONSTITUTION:An image reversal photoresist film 6 which is insoluble in a developing soln. is formed to the part of the half-cured polyimide corresponding to the layer above the gate bus lines 2 and gate electrodes 2' and is subjected to development processing, by which only the insoluble part remains as the resist film 6'. The polyimide film 16, therefore, remains in the layer under the same as well and the polyimide film in the other part is removed together with the resist film 6. The inter-layer insulating film in the intersected parts of the gate bus lines 2 and the drain bus line is, therefore, the gate insulating film 3 added with the polyimide film 16. The polyimide film 16 exists if the pinhole exists in the film 3. The stages are thereby simplified and the generation of the short circuit defects by the pinholes of the interlayer insulating film in the bus line parts is prevented.</p> |
