The spare structure for repairing the fault area of the circuit with laser beam is formed by steps of: (a) forming SiO2 (12) and polycrystal Si (13) layers on a Si substrate (1); (b) forming a fuse link (16) and a spare structure (15) with photoetching process; (c) forming an insulation layer (17) possessing P above the (15) and (16) . (d) exposing the (15) with photoetching process; (e) vacuum- depositing a metal layer (20) on the (15); and (f) forming a metalized spare structure with photoetching process.
