SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE:To increase the density and degree of integration of a memory cell by arranging a capacitor between a floating gate and a semiconductor substrate. CONSTITUTION:A semiconductor memory device includes: a selecting transistor TR2 formed on a semiconductor substrate 11 and having a gate region 3a as part of a word line 3a; a first insulating film 6 thinly formed on a selecting part of a drain region 8 of the selecting transistor TR2; a floating gate 2 formed on a region including the insulating film 6; and a control gate 1 formed through a second insulating film 12 having a tunnel region 12a. A capacitor is formed between the floating gate 2 and the semiconductor substrate 11. Accordingly, a high density and highly integrated memory cell can be obtained.