| 摘要 |
PURPOSE:To increase level of integration by connecting through a resistor element where the resistor element and a semiconductor base are to be connected and by connecting a gate electrode of driver transistor and the semiconductor base directly where the resistor element and the semiconductor base are not to be connected. CONSTITUTION:A gate electrode 11a of a first driver transistor 11 is connected to a first resistor element 27, and at this connecting point the first resistor element 27 is connected to a source/drain area 15e of a first switching transistor 14. Also a gate electrode 11a is directly connected to a source/drain area 15c of a second driver transistor 12, and a gate electrode 12a of the transistor 12 is connected to a second resistor element 28. Also at this connecting point the second resistor element 28 is connected to a common source/drain area 15a of a second switching transistor 13 and the first driver transistor 11. Thus level of integration is increased. |
