| 摘要 |
PURPOSE:To make it possible to form, in superior reproducibility, a mask for X-ray exposure in high dimensional accuracy by forming an X-ray absorbing layer out of chalcogen compound of high melting point metal or intercalation compound. CONSTITUTION:An X-ray absorbing layer is constituted, of chalcogen compound of high melting point metal or intercalation compound. The internal stress of a film of the chalcogen compound such as tungsten, tantalum, etc., is softened by slip between layers, and such great internal stress as in the metallic films such as tungsten, tantalum, etc., does not remain. Accordingly, the internal stress generated in the X-ray absorbing layer is reduced to about 1X10<8>dyne/ cm<2>, and it becomes possible to restrain distortion of a mask pattern resulting from this stress below 10%. Hereby, a mask for X-ray exposure in high accuracy can be formed in superior reproducibility. |
