| 摘要 |
PURPOSE:To make possible to form a positive and a negative type patterns in the same development processing of the title material respectively by incorporating one or more kinds of specified alkaline soluble polymers, a specified orthonaphthoquinone compd. and an azide compd. in the pattern forming material. CONSTITUTION:The pattern forming material contains one or more kinds of the alkali soluble polymer shown by formulas I and II, the orthonaphthoquinone compd. shown by formula III and the azide compd. The orthonaphthoquinone compd. contd. in the irradiated part of the pattern forming material is changed to indene carboxylic acid by irradiating an UV ray, and as the irradiated part can be removed with an alkaline development, the material displays a positive type resist characteristic. And, a nitrene radical generates with a high efficiency at the time of irradiating high energy rays to the material, and the nitrene radical is allowed to react with the hydroxyl group of silanol contd. in a siloxane polymer, whereby the alkaline solubility of the siloxane polymer is controlled. So that, the material displays a negative type resist characteristics. Thus, the negative type and the positive type patterns are formed in the same development processing respectively. |
