发明名称 |
Wavelength-resonant surface-emitting semiconductor laser |
摘要 |
A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.
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申请公布号 |
US4881236(A) |
申请公布日期 |
1989.11.14 |
申请号 |
US19880184745 |
申请日期 |
1988.04.22 |
申请人 |
UNIVERSITY OF NEW MEXICO |
发明人 |
BRUECK, STEVEN R. J.;SCHAUS, CHRISTIAN F.;OSINSKI, MAREK A.;MCINERNEY, JOHN G.;RAJA, M. YASIN A.;BRENNAN, THOMAS M.;HAMMONS, BURRELL E. |
分类号 |
H01S5/00;H01S5/042;H01S5/183 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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