| 摘要 |
PURPOSE:To prevent the over-baking of the lowest resist layer and to make the removal easy, by a method wherein when multiple resist layers comprising two or more layers are formed on a semiconductor substrate, a first resist layer is cladded and then dried, and additional layers are formed thereon through a metallic layer and dried by the high frequency heating. CONSTITUTION:A semiconductor substrate 1 comprising such as Si, GaAs, etc. is applied with a positive-type resist layer 2 with thickness 0.1-10mum as a first resist layer. The layer 2 is not set but baked to the extent that the layer is readily removable by the solvent such as aceton. Then, an intermediate layer 3 comprising such as Ti, Al, etc. is deposited with thickness 0.05-0.5mum thereon, and an upper resist layer 4 comprising such as polytetrafluoropropylmethacrylate is applied further thereon with thickness 0.1-3mum. This multi-layers are then irradiated with high frequency waves 5 to be baked. According to this method, the high frequency waves 5 is reflected by the metallic layer 3, so that the lowest resist layer is not over baked. |
