| 摘要 |
<p>PURPOSE:To drive the floating capacity of large capacity with the charge pump of a small plate area by arbitrarily selecting plural high voltage generating circuits, which supply a high voltage to respective memory arrays to be divided into plural parts, and decreasing the floating capacity of drive each charge pumps. CONSTITUTION:Plural charge pumps 6-9, which are respectively allocated to memory arrays 2-5 to be divided into plural parts, and a charge pump selecting circuit 14, which selects the arbitrary charge pumps 6-9, are provided. Accordingly, since the charge pumps 6-9 are selected to be activated by control signals 1 and 2, the floating capacity, which goes to be load, is decreased in comparison with a case that all the memory arrays 2-5 are driven by one charge pump. Thus, even when the current driving ability of the charge pumps 6-9 is poor on a current driving performance, the high voltage of correspond to the increase of the floating capacity can be generated.</p> |
