| 摘要 |
PURPOSE:To obtain a pattern having high resolution by prebaking a resist film formed on a substrate, exposing the prebaked resist film to specified short wavelength beams through a rectile to execute postbaking, then repeating predetermined development and drying. CONSTITUTION:A resist film consisting of a copolymer of poly(methacrylate) is formed on a substrate of such as silicon. The resist film is prebaked and then exposed to beams having <=350nm short wavelength using excimer laser beams, etc. through a rectile film to transform the constituent of the resist film to low molecular materials, then the film is postbaked. Thereafter, the exposed resist film is developed with a developing soln. consisting of methyl isobutyl ketone and a diluent such as CCl4 having an approximately equal dielectric constant to the resist film. Thus, a sharp and fine pattern is obtd. without causing swelling of the resist film. |
