| 摘要 |
PURPOSE:To prevent the change of Si into P type in the neighborhood of the interface due to the Al which is simultaneously diffused by the simultaneous diffusion from a substrate into the neighborhood of the interface, when an impurity is thermally diffused from the surface after previously implanting the impurity selectively into the sapphire substrate and thus growing Si. CONSTITUTION:Sb is previously implanted into the neighborhood of the surface 202 of the sapphire substrate 201, thereafter the N type Si 203 is grown as normal and covered with an SiO2 204, and B is thermally diffused resulting in the formation of a source 205 and a drain 206. Thereby, since the Al and the Sb are simultaneously diffused at the part 207 of the Si layer close to the sapphire substrate, the inversion of the Si layer into P type due to the Al can be inhibited, and accordingly the source and drain conductions of an N channel FET can be prevented. |
