| 摘要 |
PURPOSE:To prevent a capacitance from being lowered due to formation of a transition layer such as SiOx by containing the following: a conductive metal oxide film formed on a silicon layer or on an electrode layer composed of a metal silicide; a dielectric film formed on it and composed of an insulating metal oxide; a capacitance formed of an electrode and formed additionally on it. CONSTITUTION:The following are contained: a conductive metal oxide film 4 formed on a silicon layer 3 or on an electrode layer composed of a metal silicide; a dielectric film 5 formed on the conductive metal oxide film 4 and composed of an insulating metal oxide; a capacitance constituted of an electrode 6 and formed on the dielectric film 5. For example, an insulating film 2 is formed selectively on the surface of a silicon substrate 1; then, a high- concentration impurity region 3 is formed. Then, a conductive metal oxide film 4 such as a TiO2 film, a mixed film of TiO2 and SnO2 or the like is formed; after that, the conductive metal oxide film 4 is etched selectively; the film is left in a desired region. Then, an insulating metal oxide film 5 of Ta2O5, ZrO2, HfO2 or BaTiO3 is formed; after that, an electrode 6 is formed in a desired region; a capacitance is formed. |
