| 摘要 |
PURPOSE:To remarkably widen the p-n junction area and improve current capacity by forming a part in the depth direction in the p-n layer provided in a semiconductor layer. CONSTITUTION:A poly-Si film is stacked on an SiO2 film 2 formed on p type Si substrate 1, and n<+> regions 3, 6 and 4, 7 and p region 5 connected to electrode terminal are formed in such a film. According to this structure, a current capacity between the regions 3 and 4 is almost doubled but the p-n junction is reduced to about 1/3 as compared with parallel formation of the conventional n-p-n region, because the p-n junction of the conventional type exists at the interface with the SiO2 film but still it exists, in the case of this invention, mainly within the poly-Si since it extends in the depth direction. |
