| 摘要 |
PURPOSE:To enable dry etching at a low DC voltage and to realize fast etching speed by using gas which contains NH3 for etching gas to etch an organic film formed on a foundation layer selectively. CONSTITUTION:Gas which contains NH3 is used as etching gas to selectively etch an organic film 23 formed on a foundation layer 22. For instance, an aluminum layer 22 is formed on an insulating material layer 21 as a foundation layer and a three-layer resist layer consisting of the organic film 23, and SOG film 24 and an upper resist layer 25 is formed thereon. The upper resist layer 25 is thereafter selectively exposed and patterned. The SOG film 24 is etched by RIE method using the upper resist film 25 as a mask. The dry etching is carried out by using etching gas which contains NH3 and the patterned SOG film 24 as a mask. The aluminum layer 22, the foundation layer, is etched by using the fine patterned organic film 23. |
