| 摘要 |
PURPOSE:To eliminate that one part of a light waveguide is broken off and to enhance the productivity even in a wafer where an easily cleavable direction of a crystal of a semiconductor substrate is different from that of a split direction by a method wherein a groove part in a direction which is different from an easily cleavable direction is formed in a wafer and the wafer is split along the groove part. CONSTITUTION:A semiconductor wafer is formed by laminating a multi-layer structure 12 on a semiconductor substrate 11 by epitaxial growth; groove parts 16 in a direction which is different from an easily cleavable direction of the substrate 11 are formed in the wafer; after that, the wafer is split along the groove parts 16. For example, a multilayer structure 12 is laminated on an n-type GaAs (111) plane substrate 11; an SiNx film 13 is evaporated onto the surface; stripe parts 15 acting as electric current passages are formed in such a way that they are perpendicular to a cleavage face 14 of a crystal; a p-side electrode is evaporated. Then, stripe-shaped groove parts 16 are formed on the rear of a wafer in parallel to the stripe parts 15 of the electric current passages; after that, an n-side electrode is evaporated; a bar-shaped small piece 17 is taken out by making use of the cleavage face 14. A crack 19 is produced along the groove parts 16; after that, the small piece is split into laser elements by using an adhesive sheet. |
