发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To make it possible to enhance a guard effect to movable ions even under an envrironment, in which a voltage can not be applied to guard rings, by a method wherein the first and second impurity layers of a fuse are shifted from each other and are arranged in such a way that the crossing parts of the first and second impurity layers are not positioned on a straight line. CONSTITUTION:A fuse 21 is bent between a guard ring 22 on the inner side and a guard ring 23 on the outer side and first and second diffused layers 1 and 6 of the fuse 21 are shifted their positions from each other and are arranged in such a way that the crossing parts of the layers 1 and 6 are not positioned in the configuration of a straight line to prevent an interlayer film, which is formed along the fuse 21, of the ring 22 on the inner side and an interlayer film, which is formed along the fuse 21, of the ring 23 on the outer side from being positioned in the configuration of a straight line. Accordingly, the linearities of the interlayer films, which are formed along the fuse 21, at the crossing parts of the fuse are destroyed. Thereby, a probability of stopping movable ions, which passed through the interlayer film of the ring 22 on the inner side, by the ring 23 on the outer side at the crossing parts of the fuse can be increased even under an environment, in which a voltage can not be applied to the rings.
申请公布号 JPH01278745(A) 申请公布日期 1989.11.09
申请号 JP19880108394 申请日期 1988.04.30
申请人 MATSUSHITA ELECTRON CORP 发明人 MITSUI SHINJI
分类号 H01L29/06;H01L21/82;H01L27/10 主分类号 H01L29/06
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