| 摘要 |
PURPOSE:To enable the destruction of a P-N junction between a base and an emitter by a small writing current, and prevent the deterioration of breakdown voltage of a junction between a collector and a base by installing a step- difference on a connection surface, of an emitter region, with an electrode part, and forming a sharp angle part in the plane pattern of said step-difference part. CONSTITUTION:On a connection surface of an emitter region 5 with an electrode part 13, at least one step-difference 8 is arranged, and a plane pattern 15a intersecting said step-difference 8 at a sharp angle is arranged. When a voltage is applied to the electrode 13 for writing, the electric field concentration at a sharp angle part 15a of the step-difference 8 on the emitter region 5 surface. As a result, a P-N junction between a base 4 and an emitter 5 can be destructed by a small writing current, and, further, the direction of writing spike can be set so as to incline at a specified angle outside the semiconductor substrate surface, thereby preventing the deterioration of breakdown voltage of a P-N junction between a collector and a base. In addition, the direction of writing spike can be determined in one direction. |
