| 摘要 |
PURPOSE:To increase breakdown voltage, and improve the life of an element by arranging the gate electrode of an MIS type transistor on also the upper part of a comparatively low concentration region turning to a part of a source and a drain. CONSTITUTION:On the upper side of an N<-> diffusion regions 4, 5 and a channel region 6, a gate electrode 8a is arranged via a gate oxide film 7. On the gate electrode 8a corresponding with the upper part of the channel region 6, a gate electrode 8b is arranged. That is, also on the upper side of region 4, 5 doped with comparatively low concentration of inverse conductivity type with respect to the source 2 side and drain 3 side semiconductor substrate 1, the gate electrodes 8a, 8b are installed. Thereby, the electric field of drain 3 of an MIS type transistor is relieved, and the breakdown voltage can be increased. In addition, current driving capability in the triode region and the pentode region of a transistor is not decreased, and the life of an element can be improved by decreasing the deterioration of drain characteristics. |
