| 摘要 |
PURPOSE:To realize application of a large capacity control current by connecting an internal control electrode ane external leadout control electrode of a semiconductor element through a conductive layer provided at the internal wall of an insulated package. CONSTITUTION:A thyristor element 2 is positioned by a guide ring 3 and a cathode copper block 7 is placed through a cathode compensating plate 6 to a ceramic metal seal 1 consisting of an anode copper block 1a, a flange 1b, a gate pipe 1c, a welding ring 1d and a ceramic cylinder 1e. The seal 1 is also provided with a stepped part 1f and a conductive layer 1g connected to the gate pipe 1c is formed at the entire part of such stepped part. The gate electrode of thyristor element 2 is connected to the conductive layer 1g with a plurality of gate lead wires 4. Since a plurality of gate lead wires 4 can be extended as explained above, a large capacity gate current can be used. |
