发明名称 |
Silicon carbide diffusion tube for semi-conductor. |
摘要 |
<p>Disclosed is a silicon carbide type diffusion tube comprising a diffusion tube base made of reaction-sintered silicon carbide having an iron concentration of 20 ppm or below and a density of 3.0 g/cm<3> or over, and a silicon carbide layer consisting of a high-purity silicon carbide film having an iron concentration of 5 ppm or below deposited on the inner surface of the tube base and a silicon carbide type diffusion tube comprising a diffusion tube base made of reaction-sintered silicon carbide, and a silicon carbide layer consisting of a Si-depleted layer formed in the inner wall of the reaction-sintered silicon carbide tube base and a high-purity silicon carbide film deposited on the Si-depleted layer, said silicon carbide film having a thickness of more than 0.5 mm.</p> |
申请公布号 |
EP0340802(A2) |
申请公布日期 |
1989.11.08 |
申请号 |
EP19890108265 |
申请日期 |
1989.05.08 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
MATSUMOTO, FUKUJI;TAWARA, YOSHIO;HAYASHI, MICHIO |
分类号 |
C04B35/573;C30B31/10 |
主分类号 |
C04B35/573 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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