| 摘要 |
PURPOSE:To enable easy and simple formation of a stacked capacitor whose capacitance is increased on a small occupied area, by a method wherein, after polycrystalline films, silicon dioxide films and silicon carbide films are formed in order, a first and a second apertures reaching a substratum of the polycrystalline silicon films are formed, and electrode leading-out parts are formed by burying the apertures with conductive material. CONSTITUTION:After polycrystalline silicon films 3A, 3B, silicon dioxide films 4A-4C, and silicon carbide films 5A, 5B are formed in order on a substrate 1, a first apertures 7, 8 reaching from the surface to the substratum of the polycrystalline silicon films 3A, 3B are formed. After a suitable insulating film is formed on the side surface of a necessary film exposed in the aperture 7, 8, first electrode leading-out parts 9, 10 to lead out one electrodes group of a memory capacitor are formed, by burying the apertures with a polycrystalline silicon film. Further, by the similar process, a second electrode leading-out part 13 is formed. Thereby, a stacked capacitor whose capacitance is increased in a small planar occupied area can be formed, so that this capacitor is suitably applied to the memory capacitor of a fine DRAM. |
