发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To make it possible to measure a signal waveform in a dense region, with high S/N ratio by connecting a data line or a word line with a measuring terminal for an electron beam tester being formed by using a final wiring layer upper than the data line or the word line. CONSTITUTION:A data line 18 or a word line 7, at least, is connected with a measuring terminal 21 for an electron beam (EB) tester formed by using a final wiring layer upper than the data line or the word line. Said measuring terminal 21 for the EB tester is formed by using the same conducting layer as the word line 7 or the data line 18. Thereby, the measuring terminal 21 can be connected with a data line 18 or the word line 7 by using the smallest size. As a result, the measuring terminal 21 can be arranged in a dense region where the data line 18 or the word line 7 is arranged, so that the measurement of signal waveform with high S/N ratio is enabled.
申请公布号 JPH01278065(A) 申请公布日期 1989.11.08
申请号 JP19880108748 申请日期 1988.04.28
申请人 HITACHI LTD;HITACHI VLSI ENG CORP 发明人 SUZUKI YUKIE;MURANAKA MASAYA;ISHIHARA MASAMICHI
分类号 G11C29/00;G11C29/50;H01L21/66;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C29/00
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