发明名称 |
Gettering process for semiconductor wafers |
摘要 |
A reduction in the number of impurities present in semiconductor wafers is obtained by gettering the impurities prior to mechanically lapping both wafer surfaces. Damage is created on both surfaces of the semiconductor wafer by the sawing of an ingot into many wafers. The impurities are then gettered to the damaged surfaces by subjecting the wafer to a high temperature. The subsequent lapping operation then removes the damaged regions along with the gettered impurities.
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申请公布号 |
US4878988(A) |
申请公布日期 |
1989.11.07 |
申请号 |
US19880251734 |
申请日期 |
1988.10.03 |
申请人 |
MOTOROLA, INC. |
发明人 |
HALL, JAMES B.;ROBINSON, MARTIN G.;SWIFT, RONALD C. |
分类号 |
C30B33/00;H01L21/322 |
主分类号 |
C30B33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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