| 摘要 |
PURPOSE:To enable an electrostatic circuit with high reliable gate to be formed by connecting diode elements to the gate of MOS circuit transistor connected to the output terminal. CONSTITUTION:A diode element 106 realized by using the same method as that for forming TR source or drain is connected to the terminal edge of an equivalent resistor 109 due to configuration ratio of gate material of MOS transistor TR connected to the output terminal and at a part closer to the output terminal. Actual voltage is applied to the reverse direction of this diode when active voltage for gate control is applied to in normal operating status of transistor but the reverse-direction withstand voltage of diode has been guaranteed within the semiconductor integrated circuit, thus preventing plastic breakdown status from occurring. It allows an electrostatic circuit with highly reliable gate to be formed. |
