| 摘要 |
PURPOSE:To increase the driving current of a transistor with a fine structure and improve the characteristics of the transistor by providing a protruding part on a semiconductor substrate under a gate electrode. CONSTITUTION:A protruding stripe is provided on a semiconductor substrate under a gate electrode and the upper surface and both the side surfaces of the protrusion 11 are covered with a gate insulating film 3. A gate electrode 2 is so formed as to cross over the protrusion 11 and the part of the protrusion 11 surrounded by the gate electrode 2 is used as a channel region and source and drain 4 are formed in the parts of the protrusion 11 on both the sides of the gate electrode 2. In this construction, carriers (electrons or positive holes) are transferred along the longitudinal direction of the protrusion 11. With this constitution, a fine integrated circuit area can be obtained and the driving current of a transistor with the fine structure can be increased and the transistor characteristics can be improved. |
