发明名称 FORMATION OF ELECTRODE FOR SEMICONDUCTOR DEVICE AND ETCHING DEVICE THEREFOR
摘要 <p>PURPOSE:To increase the junction strength between a bump electrode and a finger lead, by forming fine V-shaped grooves in the top surface of the bump electrode by a treatment of anisotropic etching. CONSTITUTION:Fine V-shaped grooves 17 are formed on the top surface of a bump electrode 16 which is formed on an under-bump layer 15 by treatment with anisotropic etching. In other words, as anisotropic etching does not processed very much crosswise with respect to a sample, some differences in an etching speed due to surface bearings are observed and then, the fine V-shaped grooves 17 are formed on the top surface of the bump electrode 16. The fine V-shaped grooves are filled with a solder layer which sticks the bump electrode and finger leads together in such a manner that the solder layer encroaches upon the grooves. Then, superior junction strength is obtained.</p>
申请公布号 JPH01276647(A) 申请公布日期 1989.11.07
申请号 JP19880105302 申请日期 1988.04.27
申请人 CASIO COMPUT CO LTD 发明人 SUZUKI AKIRA;YOKOYAMA SHIGERU
分类号 H01L21/302;H01L21/3065;H01L21/321;H01L21/60 主分类号 H01L21/302
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