FINE PATTERN FORMING METHOD

摘要

PURPOSE:To form a fine positive-negative reversal pattern having high dry etching resistance by exposing a resist with electron beams or converged ion beams and irradiating the resist with ions. CONSTITUTION:A resist is applied to a semiconductor substrate and exposed with electron beams or converged ion beams. The entire surface of the resist is then irradiated with ions such as H<+> or Si<+> and the resist is developed to form a positive-negative reversal pattern for a semiconductor circuit. Since the exposed region of the resist is made insoluble in a developer by the irradiation, the reversal pattern having high dry etching resistance can be formed by developing the resist.