| 摘要 |
PURPOSE:To relax concentration of current due to merging of charge current generated from depletion layer and main current on short circuiting and to prevent breakdown by allowing main electrode to come into contact with the lower part of gate pad of well layer adjacent to the channel layer of MOSFET active area. CONSTITUTION:A P<+> well layer 6 connected to an emitter electrode 7 is divided below a gate pad part 30 to allow a P<+> well layer 61 to be formed. This electrode 7 comes in contact with the P<+> well 6 of an active area 20 at a contact part 71 and the division well layer 61 below the gate pad 30 at an auxiliary, contact part 72 provided at the opening of a separate insulation film 10. Thus, since charge current passing through the P<+> well layer 61 below the pad 30 flows to the electrode 7 through the contact part 72, it does not flow to the contact part 71. By providing the contact part 72 which does not divide the well layer 6. merge of charge current and main current can be greatly avoided, However, by dividing the well layer, concentration of current can be prevented effectively. |
