Dynamic random access memory having storage gate electrode grounding means

摘要

A dynamic RAM provided on a semiconductor substrate comprises: a memory cell including a capacitor for storing electric charges as information, the capacitor having a storage gate electrode to which a potential other than a ground potential is applied during normal operation of the dynamic RAM; a peripheral circuit including a CMOS circuit; and grounding means for applying the ground potential to the storage gate electrode only in a predetermined period immediately after a start of application of a power supply voltage to the dynamic RAM.