| 摘要 |
<p>PURPOSE:To prevent the generation of a disconnection at the time of forming a source line by providing 30-60 deg. taper shape to a gate line. CONSTITUTION:The taper angle of polycrystalline Si constituting the gate line is specified to 30-60 deg.. The taper angle of the polycrystalline Si 101 is controlled by the compsn. of the gas for plasma etching. The taper is formed to the step covering of an interlayer insulating film 102 formed on the polycrystalline Si when the taper angle is controlled to 30-60 deg.. Since the source line is sputtered to comply with the taper shape of the interlayer insulating film, the disconnection of the source line is prevented.</p> |
